Title :
Optimization of resolution-enhanced photolithography for a 256 Mb DRAM cell
Author :
Ferguson, R. ; Ausschnitt, C. ; Chang, I. ; Farrell, T. ; Hashimoto, K. ; Liebmann, L. ; Martino, R. ; Maurer, W. ; Mii, T. ; Moy, D. ; Neisser, M. ; Nunes, R. ; Samuels, D. ; Weed, J.
Author_Institution :
Semicond. Res. & Dev. Center, IBM Corp., Hopewell Junction, NY, USA
Abstract :
An approach for design-specific lithography optimization using simulation and experimental validation has been demonstrated for a 256 Mb DRAM cell. Results from this study indicate that the optimum lithographic solution has a strong dependence on pattern shape and density. Initial emphasis in the implementation of resolution-enhancement techniques should be placed on the development of attenuated phase-shifting masks as well as off-axis illumination. These efforts must continue to strive towards extending lithographic performance beyond current capabilities at 0.25 /spl mu/m groundrules.<>
Keywords :
DRAM chips; integrated circuit technology; masks; photolithography; 0.25 micron; 256 Mbit; DRAM cell; IC fabrication; attenuated phase-shifting masks; design-specific lithography optimization; offaxis illumination; resolution-enhanced photolithography; simulation; Analytical models; Design optimization; Fabrication; Lead compounds; Lighting; Lithography; Performance analysis; Random access memory; Research and development; Resists;
Conference_Titel :
VLSI Technology, 1994. Digest of Technical Papers. 1994 Symposium on
Conference_Location :
Honolulu, HI, USA
Print_ISBN :
0-7803-1921-4
DOI :
10.1109/VLSIT.1994.324441
