Title :
Advanced SEM-based metrology of systematic defects
Author :
Lagus, Mark E. ; Shimshi, Rinat ; Svidenko, Vicky
Author_Institution :
IBM Microelectronics, Hopewell Junction, NY, USA
Abstract :
This paper describes a quantitative SEM-based inspection methodology implemented in IBM´s 300 mm FAB to detect, monitor, and resolve systematic defect mechanisms at the 90 nm technology node. Two examples are described: (a) corrosion of copper interconnects at the bottom of isolated vias, leading to electrical opens, and (b) channels in the dielectric separating two metal line ends, resulting in electrical shorts. In both cases, this technique provided quantitative feedback unobtainable via conventional inspection techniques.
Keywords :
corrosion; fault diagnosis; inspection; integrated circuit interconnections; integrated circuit manufacture; integrated circuit measurement; integrated circuit testing; scanning electron microscopy; 300 mm; 90 nm; 90 nm technology node; Cu; SEM-based inspection methodology; SEM-based metrology; copper interconnect corrosion; electrical opens; electrical shorts; isolated vias; systematic defects; Condition monitoring; Copper; Corrosion; Etching; Failure analysis; Feedback; Focusing; Image analysis; Inspection; Metrology;
Conference_Titel :
Semiconductor Manufacturing, 2005. ISSM 2005, IEEE International Symposium on
Print_ISBN :
0-7803-9143-8
DOI :
10.1109/ISSM.2005.1513407
