DocumentCode :
20925
Title :
A Flexible 0.18 
BiCMOS Technology Suitable for Various Applications
Author :
Hashimoto, Toshikazu ; Nonaka, Yosuke ; Tominari, T. ; Fujiwara, Toshihito ; Udo, Tsutomu ; Satoh, H. ; Watanabe, K. ; Jimbo, Toshihiko ; Shimamoto, H. ; Isomura, Satoru
Author_Institution :
Micro Device Div., Hitachi Ltd., Tokyo, Japan
Volume :
1
Issue :
11
fYear :
2013
fDate :
Nov. 2013
Firstpage :
181
Lastpage :
190
Abstract :
Hitachi´s SiGe BiCMOS technology, which integrates 0.18 μm CMOS and a SiGe heterojunction bipolar transistor (HBT), does not degrade MOS or bipolar performance. The BiCMOS process is divided into blocks, and the ordering of their processing is optimized so that they do not interfere with each other. Low-thermal-budget SiGe HBT formation is achieved using a minimal-moisture-desorption oxide layer, thereby avoiding disturbing the CMOS process. This technology, which can also be applied to the 0.13 μm generation, has been used for applications ranging from high-speed ones like automotive radar and 40 Gbps optical communication to consumer ones like wireless.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; heterojunction bipolar transistors; optical communication; planarisation; road vehicle radar; BiCMOS technology; SiGe; automotive radar; bit rate 40 Gbit/s; heterojunction bipolar transistor; low-thermal-budget HBT formation; minimal moisture desorption oxide layer; optical communication; size 0.13 mum; size 0.18 mum; BiCMOS integrated circuits; Bipolar transistors; CMOS integrated circuits; CMOS technology; Heterojunction bipolar transistors; Logic gates; Silicon germanium; BiCMOS; Bipolar transistor; SiGe heterojunction bipolar transistor (HBT); hydrogen termination;
fLanguage :
English
Journal_Title :
Electron Devices Society, IEEE Journal of the
Publisher :
ieee
ISSN :
2168-6734
Type :
jour
DOI :
10.1109/JEDS.2013.2294202
Filename :
6681899
Link To Document :
