DocumentCode
20941
Title
UV Enhanced Field Emission for β-Ga2O3 Nanowires
Author
Wu, Yijen L. ; Shoou-Jinn Chang ; Liu, Chi Harold ; Wen-Yin Weng ; Tsung-Ying Tsai ; Cheng-Liang Hsu
Author_Institution
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
Volume
34
Issue
5
fYear
2013
fDate
May-13
Firstpage
701
Lastpage
703
Abstract
This letter presents vapor-liquid-solid growth of β-Ga2O3 nanowires (NWs) on cost-effective SiO2/Si template and the fabrication of β-Ga2O3 NW field emitters. It is found that the β-Ga2O3 NWs grown at 950°C are structurally uniform, defect free, and well-oriented with pure monoclinic structure. It is also found that turnon fields are 2.0, 3.9, and 5.8 V/μm whereas field-enhancement factors β are 1890, 2760, and 4489, for the samples grown at 850°C, 900 °C, and 950°C, respectively. For the sample prepared at 950°C, it is found that we could further reduce the turnon field from 2 to 1.2 V/μm whereas enhance the field-enhancement factor β from 4489 to 6926 by ultraviolet irradiation.
Keywords
field emission; gallium compounds; nanowires; radiation effects; β-Ga2O3 nanowire; Ga2O3; UV enhanced field emission; field emitter; field-enhancement factor; monoclinic structure; temperature 850 C; temperature 900 C; temperature 950 C; ultraviolet irradiation; vapor-liquid-solid growth; $betahbox{-}{rm Ga}_{2}{rm O}_{3}$
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/LED.2013.2254105
Filename
6502192
Link To Document