• DocumentCode
    2094597
  • Title

    Wide band monolithic GaAs SSB modulator

  • Author

    Bóveda, A. ; Ortigoso, F. ; Alonso, J.I. ; Sánchez, J.C. ; Pérez, F.

  • Author_Institution
    Alcatel Standard Electrica, S.A. c/Einstein s/n, Tres Cantos, 28760 Madrid, Spain, Tel: 34 1 803 47 10; Fax: 34 1 804 00 16; e-mail boveda@trescantos.sesa.es
  • fYear
    1993
  • fDate
    6-10 Sept. 1993
  • Firstpage
    831
  • Lastpage
    833
  • Abstract
    A GaAs monolithic single-side-band up-converter designed for use in communication systems is presented. The device uses two high performance four-quadrant-multipliers made with MESFET´s using the Gilbert cell structure, that are operated in a 90° configuration to generate a single-sideband output. More than one-decade (0.5-5 GHz) RF bandwidth is achieved. IF bandwidth is DC500 MHz and power consumption is 300 mW. Real measurements demonstrate more than 40 dB suppression of all spurious signals, over the whole RF and IF bandwidth. The chip includes 16 MESFETs and 32 passive elements in a 1.5 × 2.4 mm2 area.
  • Keywords
    Amplitude modulation; Bandwidth; Circuits; Gallium arsenide; MESFETs; Radio frequency; Schottky diodes; Signal generators; Voltage; Wideband;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference, 1993. 23rd European
  • Conference_Location
    Madrid, Spain
  • Type

    conf

  • DOI
    10.1109/EUMA.1993.336720
  • Filename
    4136781
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2094597