Title :
Characterization of Zener-tunneling drain leakage current in high-dose halo implants
Author :
Choi, Chang-Hoon ; Yang, Shyh-Horng ; Pollack, Gordon ; Ekbote, Shashank ; Chidambaram, PR ; Johnson, Scott ; Machala, Chuck ; Dutton, Robert W.
Author_Institution :
Center for Integrated Syst., Stanford Univ., CA, USA
Abstract :
Degraded junction leakage current in scaled MOSFETs due to enhanced band-to-band tunneling (i.e. local Zener effect) is characterized based on a modified band-to-band tunneling model. To suppress the severe drain leakage current in the presence of high-dose halo implants, the impact of implant conditions on drain leakage current is estimated based on implant induced damage (point defect) profiles.
Keywords :
MOSFET; Zener effect; ion implantation; leakage currents; semiconductor device models; semiconductor doping; tunnelling; MOSFETs; band-to-band tunneling; drain leakage current; high-dose halo implants; implant induced damage; local Zener effect; modified band-to-band tunneling model; point defect profiles; CMOS technology; Current measurement; Degradation; Electronic mail; Electrons; Implants; Instruments; Leakage current; MOSFETs; Tunneling;
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003. International Conference on
Conference_Location :
Boston, MA, USA
Print_ISBN :
0-7803-7826-1
DOI :
10.1109/SISPAD.2003.1233655
