Quantum surface potential model suitable for advanced MOSFETs simulation

Author

Prégaldiny, Fabien ; Lallement, Christophe ; Mathiot, Daniel

fYear

2003

fDate

3-5 Sept. 2003

Firstpage

227

Lastpage

230

Abstract

An analytical solution physically accounting for the quantum mechanical effects within the context of an explicit surface-potential-based MOSFET model is presented. The quantum model does not need any additional parameter, and is fully dependent on all terminal voltages. It gives an accurate and continuous description of the surface potential and its derivatives in all regions of operation. The validity of our new modeling approach is confirmed by both comparisons with simulation data (obtained using self-consistent Schrodinger-Poisson numerical calculations) and experimental data from an advanced deep-submicron CMOS technology.

Keywords

CMOS integrated circuits; MOSFET; Poisson equation; SCF calculations; Schrodinger equation; integrated circuit modelling; semiconductor device models; surface potential; advanced MOSFETs simulation; advanced deep-submicron CMOS technology; analytical solution; quantum mechanical effects; quantum surface potential model; self-consistent Schrodinger-Poisson numerical calculations; surface potential; terminal voltages; Analytical models; CMOS technology; Circuit simulation; Context modeling; MOSFETs; Physics; Predictive models; Quantum mechanics; Semiconductor device modeling; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003. International Conference on

Conference_Location

Boston, MA, USA

Print_ISBN

0-7803-7826-1

Type

conf

DOI

10.1109/SISPAD.2003.1233678

Filename

1233678