Title :
Thermal imaging based on high-performance InAs/InP quantum-dot infrared photodetector operating at high temperature
Author :
Razeghi, M. ; Lim, H. ; Tsao, S. ; Seo, H. ; Zhang, W.
Author_Institution :
Northwestern Univ., Evanston
Abstract :
We report a room temperature operating and high-performance InAs quantum-dot infrared photodetector on InP substrate and thermal imaging of 320times256 focal plane array based on this device up to 200 K.
Keywords :
III-V semiconductors; focal planes; indium compounds; infrared detectors; photodetectors; semiconductor quantum dots; InAs-InP; focal plane array; quantum-dot infrared photodetector; temperature 293 K to 298 K; thermal imaging; Detectors; Electromagnetic wave absorption; Indium phosphide; Infrared imaging; Optical imaging; Photodetectors; Quantum computing; Quantum dots; Temperature sensors; Thermal engineering;
Conference_Titel :
Lasers and Electro-Optics Society, 2007. LEOS 2007. The 20th Annual Meeting of the IEEE
Conference_Location :
Lake Buena Vista, FL
Print_ISBN :
978-1-4244-0925-9
Electronic_ISBN :
1092-8081
DOI :
10.1109/LEOS.2007.4382251
