Title :
Coupled modeling of time-dependent full-chip heating and quantum non-isothermal device operation
Author :
Akturk, Akin ; Goldsman, Neil ; Metze, George
Author_Institution :
Dept. of Electr. & Comput. Eng., Maryland Univ., College Park, MD, USA
Abstract :
A method for predicting full chip temperature heating resulting from device operation is presented. The method couples distributed device simulation with lumped thermal analysis. Predictions show sixty degree Kelvin temperature increases for 0.5 cm IC´s. A method for reducing chip temperature is also presented.
Keywords :
MOSFET; integrated circuit modelling; semiconductor device models; thermal resistance; 0.5 cm; coupled modeling; distributed device simulation; lumped thermal analysis; quantum nonisothermal device operation; time-dependent full-chip heating; Charge carrier processes; Differential equations; Heat engines; Integral equations; Lattices; Poisson equations; Resistance heating; Temperature; Thermal conductivity; Thermal resistance;
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003. International Conference on
Conference_Location :
Boston, MA, USA
Print_ISBN :
0-7803-7826-1
DOI :
10.1109/SISPAD.2003.1233699
