DocumentCode
2097093
Title
Infrared bands association with multivacancy-oxygen defects in silicon
Author
Sarlis, N.V. ; Londos, C.A.
Author_Institution
Dept. of Phys., Athens Univ., Greece
Volume
1
fYear
1996
fDate
9-12 Oct 1996
Firstpage
53
Abstract
Localized vibrational mode (LVM) studies in neutron irradiated oxygen-rich silicon have been carried out in order to investigate the origin of certain bands appearing in the spectra after heat treatment. The investigation was mainly focused on two satellite lines at 840 cm -1 and 825 cm-1 observed on either side of the 829 cm-1 band of VO above 250°C and 350°C respectively, upon 15 min isochronal annealings. Theoretical analysis supports the identification of the two satellites with V2O and V2 O2 defects respectively
Keywords
annealing; elemental semiconductors; impurity-vacancy interactions; infrared spectra; localised modes; neutron effects; oxygen; phonons; silicon; 250 degC; 350 degC; 825 cm-1; 840 cm-1; IR bands; Si:O; heat treatment; isochronal annealing; localized vibrational mode; multivacancy-oxygen defects; neutron irradiated samples; Annealing; Frequency; Impurities; Infrared spectra; Lattices; Neutrons; Satellites; Silicon; Spectroscopy; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Conference, 1996., International
Conference_Location
Sinaia
Print_ISBN
0-7803-3223-7
Type
conf
DOI
10.1109/SMICND.1996.557304
Filename
557304
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