Title :
Research to Improve the Forward Temperature Coefficient of FRD
Author :
Wu, Zhenxing ; Wu, Yu ; Jia, Yunpeng ; Tian, Feifei ; Liu, Yin ; Liu, Yueyang
Author_Institution :
Lab. of Power Semicond. Devices & Ics, Beijing Univ. of Technol., Beijing, China
Abstract :
The fast recovery diodes (FRDs) are widely used in high frequency and high power applications. The forward characteristics of the FRDs, such as the forward voltage drop, are very important to determine the property of the FRDs. The forward characteristics of the FRD always greatly depend on the temperature. Here, in this paper, we researched some FRDs with special structures by simulation and proposed a new structure to farther improve the temperature coefficient of the FRDs. It is found that, a diode with low P+ emitter efficiency, and a P+ buried layer at anode junction has a better forward temperature coefficient. It proposes a guiding way to design the FRDs which are worked in the positive temperature coefficient (PTC) area.
Keywords :
anodes; diodes; temperature; anode junction; fast recovery diodes; forward temperature coefficient; forward voltage drop; positive temperature coefficient; simulation; Anodes; Doping; Frequency; Impurities; Lattices; Low voltage; Power semiconductor devices; Semiconductor diodes; Semiconductor process modeling; Temperature dependence;
Conference_Titel :
Power and Energy Engineering Conference (APPEEC), 2010 Asia-Pacific
Conference_Location :
Chengdu
Print_ISBN :
978-1-4244-4812-8
Electronic_ISBN :
978-1-4244-4813-5
DOI :
10.1109/APPEEC.2010.5448583
