• DocumentCode
    2097601
  • Title

    Structural modifications of the thick polysilicon layers on silicon during phosphorus diffusion: contributing mechanisms

  • Author

    Gaisenu, F. ; Drimitriadis, C.A. ; Stoemenos, J. ; Postolache, C. ; Angelis, C.

  • Author_Institution
    Res. Inst. for Electron. Components, Bucharest, Romania
  • Volume
    1
  • fYear
    1996
  • fDate
    9-12 Oct 1996
  • Firstpage
    61
  • Abstract
    TEM investigations of the LP-LT-CVD thick (1500 nm) polySi layer on 16 nm SiO2/Si allow one to introduce specific mechanisms to explain the fast polySi regrowth and the SiO2 degradation during a short-time (15 min.) moderate (1030°C) heat-temperature treatment and during a subsequent 20 min., 1030°C annealing
  • Keywords
    CVD coatings; annealing; diffusion; elemental semiconductors; phosphorus; semiconductor doping; semiconductor thin films; silicon; transmission electron microscopy; 1030 degC; CVD films; Si:P; SiO2 degradation; SiO2-Si; TEM; annealing; fast regrowth; phosphorus diffusion; semiconductor; thick polysilicon layers; Annealing; Bipolar transistors; Degradation; Electronic ballasts; Frequency; Heat treatment; Morphology; Silicon; Temperature; Transmission electron microscopy;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Conference, 1996., International
  • Conference_Location
    Sinaia
  • Print_ISBN
    0-7803-3223-7
  • Type

    conf

  • DOI
    10.1109/SMICND.1996.557306
  • Filename
    557306
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2097601