• DocumentCode
    2098176
  • Title

    Low-Threshold Ultrafast Surface-Passivated Photonic Crystal Nanocavity Lasers

  • Author

    Englund, Dirk ; Fushman, Ilya ; Vuckovic, Jelena ; Altug, Hatice

  • Author_Institution
    Stanford Univ., Stanford
  • fYear
    2007
  • fDate
    21-25 Oct. 2007
  • Firstpage
    121
  • Lastpage
    122
  • Abstract
    Efficiency and speed of photonic crystal lasers are improved by passivating InGaAs/GaAs membranes using (NH4)S treatment. Lasers show five-fold reduction in nonradiative surface recombination rate, resulting in four-fold reduction in threshold and room-temperature operation with near THz response.
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; microcavity lasers; passivation; photonic crystals; semiconductor lasers; surface recombination; InGaAs-GaAs; low-threshold ultrafast surface-passivated photonic crystal nanocavity lasers; nonradiative surface recombination rate; photonic crystal lasers; Equations; Gallium arsenide; Laser modes; Passivation; Photonic crystals; Pulse measurements; Radiative recombination; Surface contamination; Surface emitting lasers; Surface treatment;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics Society, 2007. LEOS 2007. The 20th Annual Meeting of the IEEE
  • Conference_Location
    Lake Buena Vista, FL
  • ISSN
    1092-8081
  • Print_ISBN
    978-1-4244-0925-9
  • Electronic_ISBN
    1092-8081
  • Type

    conf

  • DOI
    10.1109/LEOS.2007.4382306
  • Filename
    4382306
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2098176