• DocumentCode
    2099663
  • Title

    Production technology of high performance III-Nitride devices

  • Author

    Roh, Sungwon D.

  • Author_Institution
    LG Innotek, Seoul, South Korea
  • fYear
    2012
  • fDate
    7-10 Nov. 2012
  • Firstpage
    1
  • Lastpage
    1
  • Abstract
    Large scale production of III-Nitride LEDs requires close attention to scalability and cost effectiveness of every technology adopted for production. Substrate diameter, material, and potential applicability to other III-N devices are important factors to consider.
  • Keywords
    III-V semiconductors; light emitting diodes; mass production; wide band gap semiconductors; LED; cost effectiveness; large scale production; light emitting diodes;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Communications and Photonics Conference (ACP), 2012 Asia
  • Conference_Location
    Guangzhou
  • ISSN
    2162-108X
  • Print_ISBN
    978-1-4673-6274-0
  • Type

    conf

  • Filename
    6511035
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2099663