DocumentCode
2101600
Title
Compound Semiconductors for Terahertz Photonics
Author
Johnston, M.B. ; Castro-Camus, E. ; Lloyd-Hughes, J. ; Merchant, S.K.E. ; Parkinson, P. ; Wang, Y.J. ; Herz, L.M. ; Fu, L. ; Gao, Q. ; Tan, H.H. ; Jagadish, C.
Author_Institution
Oxford Univ., Oxford
fYear
2007
fDate
21-25 Oct. 2007
Firstpage
409
Lastpage
410
Abstract
Terahertz photonics is a rapidly growing field. The ultra-fast dynamics of charge carriers in semiconductors is closely linked to the performance of THz photonic devices. We study a range of ion-implanted and nano-scale semiconductors for application in novel terahertz devices.
Keywords
high-speed optical techniques; integrated optoelectronics; ion implantation; semiconductor materials; submillimetre wave detectors; submillimetre wave generation; THz photonic devices; charge carrier ultra-fast dynamics; ion implantation; terahertz devices; Conducting materials; Conductivity; Detectors; EMP radiation effects; Optical materials; Optical pulse generation; Photonics; Pulse measurements; Surface emitting lasers; Switches;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society, 2007. LEOS 2007. The 20th Annual Meeting of the IEEE
Conference_Location
Lake Buena Vista, FL
ISSN
1092-8081
Print_ISBN
978-1-4244-0924-2
Electronic_ISBN
1092-8081
Type
conf
DOI
10.1109/LEOS.2007.4382452
Filename
4382452
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