Influence of the mounting configuration on the transient thermal behavior of high power laser diode arrays

Author

Puchert, R. ; Bärwolff, A. ; Voss, M. ; Menzei, U. ; Tomm, J.W. ; Luft, J.

Author_Institution

Max-Born-Inst., Berlin, Germany

fYear

1997

fDate

18-21 May 1997

Firstpage

1254

Lastpage

1259

Abstract

Operation parameters of high power laser diodes such as emission wavelength, threshold current, optical output power and lifetime depend sensitively on the temperature of the active region. For many applications, knowledge about the temporal evolution of the temperature of active region is necessary to optimize the operating conditions. This paper describes experimental and theoretical work on the influence of different mounting configurations on the temperature transients in the active regions of high power laser diodes. We investigate the transient thermal behavior in a range between 10 ns and CW operation. In this range the modeling is verified by excellent agreement of experimental data and theory

Keywords

finite element analysis; quantum well lasers; semiconductor device models; semiconductor device packaging; semiconductor laser arrays; thermal analysis; transient analysis; active region temperature; high power laser diode arrays; modeling; mounting configuration; temperature transients; transient thermal behavior; Diode lasers; Optical arrays; Optical pumping; Optimized production technology; Packaging; Semiconductor laser arrays; Silicon compounds; Stimulated emission; Temperature sensors; Threshold current;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronic Components and Technology Conference, 1997. Proceedings., 47th

Conference_Location

San Jose, CA

ISSN

0569-5503

Print_ISBN

0-7803-3857-X

Type

conf

DOI

10.1109/ECTC.1997.606336

Filename

606336