• DocumentCode
    2101901
  • Title

    Role of Device Structure on the Performance of Quantum Dot Lasers

  • Author

    Naidu, D.S. ; Mexis, M. ; Sobiesierski, A. ; Smowton, P.M. ; Summers, H.D. ; Mowbray, D.J. ; Liu, H.Y. ; Hopkinson, M.

  • Author_Institution
    Cardiff Univ., Cardiff
  • fYear
    2007
  • fDate
    21-25 Oct. 2007
  • Firstpage
    435
  • Lastpage
    436
  • Abstract
    Measurements of the confinement factor, internal loss, diffusion length and sidewall recombination, using special test structures and a new measurement method, explain the large differences in threshold current density of broad area and ridge lasers of different width.
  • Keywords
    current density; quantum dot lasers; confinement factor; device structure; diffusion length; internal loss; quantum dot lasers; sidewall recombination; Etching; Laser modes; Loss measurement; Optical devices; Optical losses; Optical materials; Optical waveguides; Quantum dot lasers; Quantum well lasers; Waveguide lasers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics Society, 2007. LEOS 2007. The 20th Annual Meeting of the IEEE
  • Conference_Location
    Lake Buena Vista, FL
  • ISSN
    1092-8081
  • Print_ISBN
    978-1-4244-0925-9
  • Electronic_ISBN
    1092-8081
  • Type

    conf

  • DOI
    10.1109/LEOS.2007.4382465
  • Filename
    4382465
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2101901