DocumentCode
2102253
Title
N incorporation into ALD HfO2 gate dielectric using ion implantation [MOSFET application]
Author
Li, Hua-Juan ; Pomp, T. ; Young, C. ; Rhoad, T. ; Saulters, J. ; Peterson, J. ; Gardner, M. ; Brown, G.A. ; Bersuker, G. ; Zeitzoff, P.M. ; Price, J. ; Hung, P.Y. ; Diebold, A. ; Huff, H.R.
Author_Institution
Int. SEMATECH, Austin, TX, USA
fYear
2004
fDate
21-23 June 2004
Firstpage
15
Abstract
A fabrication process for HfON, using ion implantation of N2 in ALD HfO2, was demonstrated. Results showed that a good quality HfON could be formed by N2 implantation, which suggests nitrogen implantation can be an alternative high-k nitridation technique. This process was successfully integrated into a traditional CMOS flow and the electrical and reliability results of HfON, as compared to HfO2, showed 10 times less Vt shift in the pulsed Id-Vg measurement and up to 70% gate leakage reduction. In addition, EOT, electron/hole mobility, TDDB and subthreshold slope of HfON also performed better than those of HfO2. A model is proposed to explain the result by attributing the improvement to the reduction of defect states (oxygen vacancies) in the HfO2 film by the presence of N in the HfON film.
Keywords
MOSFET; atomic layer deposition; dielectric thin films; electron mobility; hafnium compounds; hole mobility; ion implantation; nitridation; nitrogen; ALD gate dielectric; CMOS process flow; HfO2; HfON; N2; TDDB; defect states reduction; electron mobility; gate leakage reduction; high-k nitridation technique; hole mobility; ion implantation; subthreshold slope; CMOS process; Electric variables measurement; Fabrication; Fluid flow measurement; Hafnium oxide; High K dielectric materials; High-K gate dielectrics; Ion implantation; Nitrogen; Pulse measurements;
fLanguage
English
Publisher
ieee
Conference_Titel
Device Research Conference, 2004. 62nd DRC. Conference Digest [Includes 'Late News Papers' volume]
ISSN
1548-3770
Print_ISBN
0-7803-8284-6
Type
conf
DOI
10.1109/DRC.2004.1367760
Filename
1367760
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