ZnO thin films for high frequency SAW devices

Author

Ieki, H. ; Kadota, Mitsuhiro

Author_Institution

Murata Manuf. Co. Ltd., Kyoto, Japan

Volume

1

fYear

1999

fDate

17-20 Oct. 1999

Firstpage

281

Abstract

Sezawa wave on a ZnO/sapphire substrate is applied to low insertion loss surface acoustic wave (SAW) filters in microwave band of 1.5 GHz to 2.5 GHz range. RF planar magnetron sputtering (RF-Mg) is used for the fabrication of epitaxial ZnO film. Sputtering conditions and the dopant are decided to realize a stable and reproducible process. Details of ZnO epitaxial growth and practical application results are reviewed. To improve the piezoelectric properties of ZnO film, electron cyclotron resonance (ECR) sputtering is investigated. The ZnO/quartz substrate has small temperature coefficient of frequency (TCF) and medium electromechanical coupling coefficient (k_s) comparable to ST cut quartz and Li₂B₄O₇ respectively. Theoretical and experimental results are also discussed.

Keywords

II-VI semiconductors; piezoelectric thin films; semiconductor epitaxial layers; sputter deposition; surface acoustic wave filters; vapour phase epitaxial growth; zinc compounds; 1.5 to 2.5 GHz; Al₂O₃; RF planar magnetron sputtering; SAW filters; Sezawa wave; ZnO; ZnO/sapphire substrate; electromechanical coupling coefficient; epitaxial growth; high frequency SAW devices; piezoelectric properties; thin films; Acoustic waves; Frequency; Insertion loss; Magnetic separation; Piezoelectric films; Sputtering; Substrates; Surface acoustic wave devices; Thin film devices; Zinc oxide;

fLanguage

English

Publisher

ieee

Conference_Titel

Ultrasonics Symposium, 1999. Proceedings. 1999 IEEE

Conference_Location

Caesars Tahoe, NV

ISSN

1051-0117

Print_ISBN

0-7803-5722-1

Type

conf

DOI

10.1109/ULTSYM.1999.849403

Filename

849403