Title :
A new observation in hot-carrier induced drain current degradation in deep-sub-micrometer nMOSFETs
Author :
Chen, Jone F. ; Tsao, Chih-Pin
Author_Institution :
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
Abstract :
Hot-carrier induced drain current degradation in 0.18 μm nMOSFETs is investigated. Results show that drain current characterized at drain voltage higher than 0.1 V exhibits the most degradation. This new observation is attributed to two competing mechanisms as the characterization drain voltage increases: reduction in channel inversion charges, and reduction in charged interface states. The characteristic of drain current degradation vs. characterization drain voltage is flatter when the device is stressed under high temperature and forward body-bias.
Keywords :
MOSFET; hot carriers; interface states; inversion layers; semiconductor device reliability; thermal stresses; 0.18 micron; channel inversion charges; charged interface states; deep-sub-micrometer nMOSFETs; drain voltage; forward body-bias; high temperature stress; hot-carrier induced drain current degradation; hot-carrier reliability; CMOS process; Degradation; Hot carriers; Interface states; MOSFETs; Microelectronics; Monitoring; Stress; Temperature; Voltage;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits, 2002. IPFA 2002. Proceedings of the 9th International Symposium on the
Print_ISBN :
0-7803-7416-9
DOI :
10.1109/IPFA.2002.1025607
