DocumentCode
2103177
Title
High Speed Carrier Injection 18 Gb/s Silicon Micro-ring Electro-optic Modulator
Author
Manipatruni, Sasikanth ; Xu, Qianfan ; Schmidt, Bradley ; Shakya, Jagat ; Lipson, Michal
Author_Institution
Cornell Univ., Ithaca
fYear
2007
fDate
21-25 Oct. 2007
Firstpage
537
Lastpage
538
Abstract
We experimentally demonstrate electrooptic modulation in silicon at 18 Gbps (NRZ) in a micro-ring of 12 micron diameter using a pre-emphasis technique. Device simulations indicate that this technique can extend the bit rate to 40 Gbps.
Keywords
electro-optical modulation; integrated optoelectronics; Si; bit rate 18 Gbit/s; high speed carrier injection; pre-emphasis technique; silicon micro-ring electro-optic modulator; Bit rate; Charge carrier density; Delay; Electrooptic modulators; Optical ring resonators; Optical waveguides; P-i-n diodes; PIN photodiodes; Silicon; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society, 2007. LEOS 2007. The 20th Annual Meeting of the IEEE
Conference_Location
Lake Buena Vista, FL
ISSN
1092-8081
Print_ISBN
978-1-4244-0925-9
Electronic_ISBN
1092-8081
Type
conf
DOI
10.1109/LEOS.2007.4382517
Filename
4382517
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