Air-stable chemical doping of carbon nanotube transistors [CNFETs]

Author

Chen, Jia ; Klinke, Christian ; Afzali, Ali ; Avouris, Phaedon

Author_Institution

IBM T. J. Watson Res. Center, Yorktown Heights, NY, USA

fYear

2004

fDate

21-23 June 2004

Firstpage

137

Abstract

In this paper, we have successfully demonstrated, for the first time, air-stable chemical p-doping of CNFETs via charge transfer; introduced tunability of the V_th, transformed scaled CNFETs from ambipolar to unipolar, improved I_on by 2-3 orders of magnitude, suppressed minority carrier injection (immunity from drain induced I_off degradation from intrinsic Schottky barrier CNFET), yielding an excellent I_on/I_off ratio of 10⁶, and demonstrated excellent DIBL-like behavior.

Keywords

Schottky barriers; carbon nanotubes; charge exchange; field effect transistors; minority carriers; nanotube devices; semiconductor doping; C; DIBL; Schottky barrier CNFET; air-stable chemical p-doping; ambipolar CNFET; carbon nanotube transistors; charge transfer; drain induced off-current degradation; minority carrier injection suppression; threshold voltage tunability; unipolar CNFET; CMOS process; CMOS technology; Carbon nanotubes; Charge carrier processes; Charge transfer; Chemicals; Doping profiles; FETs; Fabrication; Ion implantation;

fLanguage

English

Publisher

ieee

Conference_Titel

Device Research Conference, 2004. 62nd DRC. Conference Digest [Includes 'Late News Papers' volume]

ISSN

1548-3770

Print_ISBN

0-7803-8284-6

Type

conf

DOI

10.1109/DRC.2004.1367822

Filename

1367822