Title :
An above-IC RF-MEMS switch
Author :
Saias, D. ; Boret, S. ; Robert, P. ; Billard, C. ; Charvet, P.L. ; Bouche, G. ; Diem, B. ; Quoirin, J.B. ; Berruyer, B. ; Laurens, M. ; Grasset, J.C. ; Aid, M. ; Belot, D. ; Ancey, P.
Author_Institution :
STMicroelectronics, Crolles, France
Abstract :
A MEMS switch is driven by a 0.25/spl mu/m BiCMOS IC and achieves 0.4dB insertion loss and 54dB isolation at 2GHz. The 400/spl mu/m/spl times/50/spl mu/m MEMS device is built together on top of the wafers enabling a system-on-chip design.
Keywords :
BiCMOS integrated circuits; microswitches; radiofrequency integrated circuits; system-on-chip; 0.25 micron; 0.4 dB; 2 GHz; BiCMOS IC; above-IC RF-MEMS switch; system-on-chip design; Bonding; Driver circuits; Electrostatics; Insertion loss; Microelectromechanical devices; Micromechanical devices; Radio frequency; Radiofrequency microelectromechanical systems; Switches; Telecommunication switching;
Conference_Titel :
Solid-State Circuits Conference, 2003. Digest of Technical Papers. ISSCC. 2003 IEEE International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-7707-9
DOI :
10.1109/ISSCC.2003.1234269
