DocumentCode
2106687
Title
FDTD modelling of IDG structures
Author
Stoiljkovic, V. ; Pennock, S.R. ; Shepherd, P.R.
Author_Institution
School of Electronic & Electrical Engineering, University of Bath, Bath, BA2 7AY, United Kingdom
Volume
2
fYear
1995
fDate
4-4 Sept. 1995
Firstpage
751
Lastpage
754
Abstract
A three-dimensional Finite-Difference Time-Domain (FDTD) technique is applied to characterise deep slot and shallow slot inset dielectric guide (IDG), and the rectangular waveguide to IDG transition. Characteristic impedance of an IDG is defined and calculations presented for the first time and it is then used to determine S-parameters of the transition. The described method utilises pulsed excitation so that wideband results are available from a single FDTD computation. A graded mesh is used for computational efficiency. Comparisons are made between experimental and theoretical results and good agreement is found.
Keywords
Boundary conditions; Dispersion; Finite difference methods; Frequency; Impedance; Pulse modulation; Rectangular waveguides; Scattering parameters; Time domain analysis; Waveguide transitions;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 1995. 25th European
Conference_Location
Bologna, Italy
Type
conf
DOI
10.1109/EUMA.1995.337063
Filename
4137276
Link To Document