Title :
SiGe pin-photodetectors integrated on silicon substrates for optical fiber links
Author :
Wohl, G. ; Parry, C. ; Kasper, E. ; Jutzi, M. ; Berroth, M.
Author_Institution :
Inst. of Semicond. Eng., Stuttgart Univ., Germany
Abstract :
100% Ge pin-photodetectors grown on SiGe strain relaxed buffer (SRB) layers are presented, For integrated detectors the SRB layer growth as well as the subsequent SiGe photodiode technology processing must be compatible with standard CMOS technology. DC photoresponsivities of 145 mA/W at 1.3 /spl mu/m and 25 mA/W at 1.55 /spl mu/m can be achieved. In first experiments the 100% Ge pin-photodetector exhibits an RC limited 3-dB opto-electrical bandwidth of 0.9 GHz.
Keywords :
CMOS integrated circuits; Ge-Si alloys; integrated optoelectronics; optical receivers; p-i-n photodiodes; photodetectors; 0.9 GHz; 1.3 micron; 1.55 micron; CMOS technology compatibility; DC photoresponsivities; RC limited 3-dB opto-electrical bandwidth; Si; Si substrates; SiGe; SiGe photodiode technology processing; SiGe pin-photodetectors; SiGe strain relaxed buffer layers; integrated detectors; optical fiber links; Buffer layers; CMOS technology; Germanium silicon alloys; Optical buffering; Optical fiber communication; Optical fibers; Photodetectors; Photodiodes; Silicon germanium; Substrates;
Conference_Titel :
Solid-State Circuits Conference, 2003. Digest of Technical Papers. ISSCC. 2003 IEEE International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-7707-9
DOI :
10.1109/ISSCC.2003.1234341
