Self-corrective device and architecture to ensure LSI operation at 0.5 V using bulk dynamic threshold MOSFET with a self-adaptive power supply

Author

Kakimoto, S. ; Okuno, T. ; Iwase, Y. ; Yaoi, Y. ; Yoshioka, F. ; Kimoto, K. ; Nakano, M. ; Kawashima, K. ; Morishita, S. ; Sugimoto, K. ; Shiomi, T. ; Okumime, T. ; Kataoka, K. ; Shibata, A. ; Toyoyama, S. ; Satoh, Y. ; Fujimoto, K. ; Tatsumi, K. ; Kotaki

fYear

2003

fDate

13-13 Feb. 2003

Firstpage

402

Abstract

A 520k transistor COMA matched filter operation at 0.5 V is achieved using a Bulk Dynamic Threshold MOSFET (B-DTMOS) device and a self-adaptive power supply (SAPS) system. B-DTMOS reduces threshold voltage dispersion. The SAPS architecture maximizes performance under worst case conditions.

Keywords

CMOS integrated circuits; MOSFET; adaptive control; integrated circuit design; integrated circuit testing; low-power electronics; matched filters; power supply circuits; voltage control; 0.5 V; 520k transistor COMA matched filter operation; LSI operation; SAPS architecture; bulk dynamic threshold MOSFET; low power SoC; self-adaptive power supply; self-corrective device; threshold voltage dispersion; worst case conditions; Adaptive control; Delay effects; Large scale integration; Leakage current; MOSFET circuits; Power MOSFET; Power dissipation; Power supplies; Threshold voltage; Voltage control;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Circuits Conference, 2003. Digest of Technical Papers. ISSCC. 2003 IEEE International

Conference_Location

San Francisco, CA, USA

ISSN

0193-6530

Print_ISBN

0-7803-7707-9

Type

conf

DOI

10.1109/ISSCC.2003.1234356

Filename

1234356