A millimeter wave quad-phase ring oscillator using 0.13 µm SiGe BiCMOS HBT technology

Author

Ali, Usman ; Thiede, A.

Author_Institution

Dept. of High Freq. Electron., Univ. of Paderborn, Paderborn, Germany

fYear

2013

fDate

26-27 Sept. 2013

Firstpage

1

Lastpage

4

Abstract

A millimeter wave quad-phase differential voltage-controlled oscillator (VCO) suitable for multi-gigabit communication systems is presented in a 0.13 μm SiGe BiCMOS HBT technology. The oscillation frequency is intended to be above 160 GHz. The circuit occupies active area of less than 0.51 mm² (690 μm × 730 μm). It operates on a dual power supply (Vcc = 4.5 V and Vee = -1.1 V) and dissipates not more than 110 mW of power per stage of the ring oscillator. The simulation results show that oscillation frequency is tunable from 173 to 182.8 GHz.

Keywords

BiCMOS analogue integrated circuits; Ge-Si alloys; bipolar MIMIC; field effect MIMIC; heterojunction bipolar transistors; millimetre wave oscillators; semiconductor materials; voltage-controlled oscillators; BiCMOS HBT technology; SiGe; VCO; frequency 173 GHz to 182.8 GHz; millimeter wave quad-phase ring oscillator; millimeter wave quadphase differential voltage-controlled oscillator; multigigabit communication systems; size 0.13 mum; voltage -1.1 V; voltage 4.5 V; Delays; Heterojunction bipolar transistors; Ring oscillators; Silicon germanium; Voltage control; Voltage-controlled oscillators; Heterojunction bipolar transistor (HBT); Millimeter wave integrated circuits; Silicon Germanium (SiGe); quadrature ring oscillator; voltage-controlled oscillator (VCO);

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Conference Dresden-Grenoble (ISCDG), 2013 International

Conference_Location

Dresden

Print_ISBN

978-1-4799-1250-6

Type

conf

DOI

10.1109/ISCDG.2013.6656297

Filename

6656297