A new kind of noise analysis model for simulating accurate phase noise in microwave MESFET oscillators

Author

Chen, Chang-Li ; Gao, Bao-Xln ; Hong, Xing-Nan

Author_Institution

Department of Electronic Engineering, Tsinghua University, Beijing 100084, People´´s Republic of China Tel: +86-10-2594786, Fax: +86-10-2564176

Volume

2

fYear

1995

fDate

4-4 Sept. 1995

Firstpage

1241

Lastpage

1244

Abstract

The paper presents a new kind of noise analysis model of oscillators and an efficient approach to the simulation of accurate near-carrier phase noise in free running microwave MESFET oscillators. The noise analysis model of the oscillator contains a complete nonlinear noise model of the MESFET and all potential noise sources. An efficient algorithm is stated which can be used to predict accurate near-carrier phase noise in microwave MESFET oscillators by nonlinear current method. Comparison between simulations and measurements proves that the noise analysis model of the oscillators is practical and the approach is suitable for microwave CAD and is excellent in both efficiency and precision in predicting phase noise of microwave MESFET oscillators.

Keywords

Analytical models; Circuit noise; Feedback circuits; Low-frequency noise; MESFET circuits; Microwave circuits; Microwave oscillators; Microwave theory and techniques; Phase noise; Predictive models;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference, 1995. 25th European

Conference_Location

Bologna, Italy

Type

conf

DOI

10.1109/EUMA.1995.337163

Filename

4137377