DocumentCode :
21112
Title :
A Compact Explicit Model for Long-Channel Gate-All-Around Junctionless MOSFETs. Part I: DC Characteristics
Author :
Lime, Francois ; Moldovan, Oana ; Iniguez, B.
Author_Institution :
Dept. of Electron. Electr. & Autom. Eng., Univ. Rovira y Virgili, Tarragona, Spain
Volume :
61
Issue :
9
fYear :
2014
fDate :
Sept. 2014
Firstpage :
3036
Lastpage :
3041
Abstract :
In this paper, we solved Poisson equation in cylindrical coordinates using approximations to obtain a compact model for the drain current of long-channel junctionless gate-all-around MOSFETs. The resulting model is analytical, explicit, and valid for depletion and accumulation, and consists of simple physically based equations, for better understanding of this device, and also easier implementation and better computation speed as a compact model. The agreement with TCAD simulations is very good.
Keywords :
MOSFET; Poisson equation; semiconductor device models; technology CAD (electronics); Poisson equation; TCAD simulations; compact explicit model; cylindrical coordinates; drain current; long-channel gate-all-around junctionless MOSFET; Analytical models; Approximation methods; Logic gates; MOSFET; Mathematical model; Semiconductor device modeling; Semiconductor process modeling; Compact model; drain current; gate-all-around (GAA) MOSFET; junctionless;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/TED.2014.2340441
Filename :
6875908
Link To Document :
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