Title :
A Compact Explicit Model for Long-Channel Gate-All-Around Junctionless MOSFETs. Part I: DC Characteristics
Author :
Lime, Francois ; Moldovan, Oana ; Iniguez, B.
Author_Institution :
Dept. of Electron. Electr. & Autom. Eng., Univ. Rovira y Virgili, Tarragona, Spain
Abstract :
In this paper, we solved Poisson equation in cylindrical coordinates using approximations to obtain a compact model for the drain current of long-channel junctionless gate-all-around MOSFETs. The resulting model is analytical, explicit, and valid for depletion and accumulation, and consists of simple physically based equations, for better understanding of this device, and also easier implementation and better computation speed as a compact model. The agreement with TCAD simulations is very good.
Keywords :
MOSFET; Poisson equation; semiconductor device models; technology CAD (electronics); Poisson equation; TCAD simulations; compact explicit model; cylindrical coordinates; drain current; long-channel gate-all-around junctionless MOSFET; Analytical models; Approximation methods; Logic gates; MOSFET; Mathematical model; Semiconductor device modeling; Semiconductor process modeling; Compact model; drain current; gate-all-around (GAA) MOSFET; junctionless;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2014.2340441