An investigation of the I-V relationship of double barrier resonant tunneling diodes in oscillating conditions

Author

Neculoiu, Dan ; Sztojanov, Lstvan ; Tebeanu, Teodor

Author_Institution

Univ. Politehnica, Bucharest, Romania

Volume

2

fYear

1997

fDate

7-11 Oct 1997

Firstpage

345

Abstract

The measured I-V characteristics of the double barrier resonant tunneling (DBRT) diode is distorted in the negative differential conductance region if the device is unstable. This paper presents a study of the I-V curve of the DBRT diode in oscillating conditions. This task is fulfilled using an accurate large signal model and PSPICE simulations. First, the PSPICE DBRT diode model is presented. Then the circuit model used for nonlinear simulations is described. Based on the simulation results, concluding remarks with regards to DBRT diode behavior are derived

Keywords

SPICE; negative resistance; resonant tunnelling diodes; semiconductor device models; DBRT diode; I-V characteristics; I-V curve; I-V relationship; PSPICE DBRT diode model; PSPICE simulations; accurate large signal model; circuit model; double barrier resonant tunneling diodes; negative differential conductance region; nonlinear simulations; oscillating conditions; simulation results; Capacitors; Circuit simulation; Diodes; Frequency; Microwave devices; Microwave measurements; Microwave oscillators; Power measurement; Resonant tunneling devices; SPICE;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Conference, 1997. CAS '97 Proceedings., 1997 International

Conference_Location

Sinaia

Print_ISBN

0-7803-3804-9

Type

conf

DOI

10.1109/SMICND.1997.651174

Filename

651174