Title :
Consideration to minimize power losses in synchronous rectification
Author :
Choi, Wonsuk ; Young, Sungmo ; Son, Dongkook ; Shin, Seunghwan ; Hyun, Dongseok
Author_Institution :
Power Supply Syst. Team, Fairchild Korea Semicond., Bucheon, South Korea
fDate :
May 30 2011-June 3 2011
Abstract :
A synchronous rectification in high performance converter design is an essential block for low voltage and high current applications since significant efficiency and power density improvements can be achieved by replacing Schottky rectification with synchronous rectification MOSFETs. Many critical parameters for synchronous rectification MOSFETs and even parasitic components in devices and printed circuit board directly affect to system efficiency of synchronous rectifications. Optimization of the MOSFETs plays an important role in improving efficiency of synchronous rectification. This paper shows the impact of power MOSFET parameters and parasitic inductance on efficiency of synchronous rectification through loss analysis of power MOSFET from an experiment and a simulation results.
Keywords :
Schottky diodes; power MOSFET; rectification; Schottky rectification; high performance converter design; power MOSFET; power losses; synchronous rectification; Equations; Immune system; Logic gates; MOSFETs; Switches; Switching frequency; Threshold voltage; Body Diode; PowerTrench® MOSFET; Shielded-Gate Technology; Synchronous rectification;
Conference_Titel :
Power Electronics and ECCE Asia (ICPE & ECCE), 2011 IEEE 8th International Conference on
Conference_Location :
Jeju
Print_ISBN :
978-1-61284-958-4
Electronic_ISBN :
2150-6078
DOI :
10.1109/ICPE.2011.5944789