DocumentCode
2115140
Title
Low power consumption 1310 nm VCSELs for 4x10 Gbps CWDM links
Author
Sirbu, A. ; Iakovlev, V. ; Mereuta, A. ; Caliman, A. ; Suruceanu, G. ; Mikovic, Z. ; Ellafi, D. ; Kapon, Eli
Author_Institution
Lab. of Phys. of Nanostruct., Ecole Polytech. Fed. de Lausanne (EPFL), Lausanne, Switzerland
fYear
2013
fDate
8-12 Sept. 2013
Firstpage
242
Lastpage
243
Abstract
1310 nm-band wafer-fused VCSELs emitting in the coarse wavelength division multiplexing wavelength grid operate at 10 Gbps in the temperature range up to 70°C at 7 mA bias current and operation voltage below 1.9 V. These devices can yield 4×10 Gbps 2 km links with power consumption of ~1 W.
Keywords
laser cavity resonators; optical communication equipment; optical links; semiconductor lasers; surface emitting lasers; wavelength division multiplexing; CWDM links; bias current; bit rate 10 Gbit/s; coarse wavelength division multiplexing wavelength grid; current 7 mA; distance 2 km; low power consumption; operation voltage; temperature 70 degC; wafer-fused VCSEL; wavelength 1310 nm; Cavity resonators; Laser fusion; Power demand; Standards; Temperature distribution; Transceivers; Vertical cavity surface emitting lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Photonics Conference (IPC), 2013 IEEE
Conference_Location
Bellevue, WA
Print_ISBN
978-1-4577-1506-8
Type
conf
DOI
10.1109/IPCon.2013.6656526
Filename
6656526
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