Development of high voltage pulse modulator for plasma source ion implantation

Author

Park, B. ; Cho, M. ; Namkung, W. ; Lee, S. ; Park, H. ; Kim, S. ; Yoo, H.

Author_Institution

POSTECH, Pohang, South Korea

fYear

2011

fDate

May 30 2011-June 3 2011

Firstpage

3001

Lastpage

3004

Abstract

High voltage pulse modulator of hard tube type has been developed for plasma source ion implantation (PSII). In this modulator, the crowbar switch is required for the excellent performance of PSII process which is different from conventional PSII. In order to reduce the falling time of pulse, the crowbar switch is used to PSII system. The arc response time for steady operation was designed with 500 ns. The current capacity is 120 A during the pulse at an output voltage of 60 kV. The total pulse length is varied from 3 to 12 us under a maximum repetition rate is 2 kHz. The maximum pulse duty is 0.012. The average power is 40 kW. In this article, we introduce the various type of modulator for PSII and show the performance of the developed modulator.

Keywords

ion implantation; plasma sources; pulse modulation; crowbar switch; current 120 A; current capacity; frequency 2 kHz; hard tube type; high voltage pulse modulator; plasma source ion implantation; power 40 kW; time 3 mus to 12 mus; time 500 ns; voltage 60 kV; Capacitors; Ion implantation; Modulation; Plasmas; Pulse transformers; Surface treatment; Switches; The pulse modulator; plasma source ion implantation;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Electronics and ECCE Asia (ICPE & ECCE), 2011 IEEE 8th International Conference on

Conference_Location

Jeju

ISSN

2150-6078

Print_ISBN

978-1-61284-958-4

Electronic_ISBN

2150-6078

Type

conf

DOI

10.1109/ICPE.2011.5944805

Filename

5944805