Microscopic electrical characterization of fixed-charge-controlled passivation films for Si solar cells

Author

Fujieda, J. ; Matsutani, R. ; Hamano, J. ; Yoshida, H. ; Arafune, K. ; Satoh, S. ; Chikyow, T. ; Tachibana, T. ; Ikeno, N. ; Lee, H. ; Ogura, A.

Author_Institution

Grad. Sch. of Eng., Univ. of Hyogo, Himeji, Japan

fYear

2011

fDate

19-20 May 2011

Firstpage

74

Lastpage

75

Abstract

A scanning capacitance microscopy (SCM) has been applied to the electrical characterization of passivation films for crystalline Si solar cells. An Y₂O₃-Al₂O₃ system, which is a binary composition spread oxide film, was used as a fixed-charge-controlled passivation film. The flat-band voltages of the Y₂O₃-Al₂O₃ system were determined from microscopic C-V curves measured by the SCM. The result was in agreement with that of a conventional C-V method. Additionally, the dV/dC images measured by the SCM were investigated for visualizing the spatial distribution of interface trap density.

Keywords

microscopy; passivation; silicon; solar cells; yttrium compounds; SCM; Si; Y₂O₃-Al₂O₃; fixed-charge-controlled passivation films; interface trap density; microscopic C-V curves; microscopic electrical characterization; scanning capacitance microscopy; solar cells; Aluminum oxide; Capacitance-voltage characteristics; Films; Microscopy; Passivation; Silicon; Voltage measurement; SCM; fixed charge; passivation film; solar cells;

fLanguage

English

Publisher

ieee

Conference_Titel

Future of Electron Devices, Kansai, (IMFEDK), 2011 International Meeting for

Conference_Location

Osaka

Print_ISBN

978-1-61284-145-8

Electronic_ISBN

978-1-61284-147-2

Type

conf

DOI

10.1109/IMFEDK.2011.5944851

Filename

5944851