Title :
Temperature-dependent reverse leakage current characterization of n-GaN Schottky diodes
Author :
Saito, T. ; Nitanda, K. ; Syahiman, A. ; Tokuda, H. ; Kuzuhara, M.
Abstract :
n-GaN Schottky barrier diodes were fabricated on a sapphire substrate. Ni/Au and Ti/Al/Mo/Au were used for Schottky and ohmic contacts, respectively. A better fitted characteristic was obtained by calculation of thermionic-field emission. Similar comparison was made for current-voltage characteristics measured at high temperatures up to 523 K. With the increase in the device temperature, better fitting was obtained with a thermionic emission theory.
Keywords :
III-V semiconductors; Schottky barriers; Schottky diodes; gallium compounds; leakage currents; ohmic contacts; wide band gap semiconductors; Al2O3; GaN; Ni-Au; Schottky contacts; Ti-Al-Mo-Au; current-voltage characteristics; n-GaN Schottky barrier diodes; n-GaN Schottky diodes; ohmic contacts; sapphire substrate; temperature-dependent reverse leakage current characterization; thermionic emission theory; thermionic-field emission; Current measurement; Plasma temperature; Schottky barriers; Schottky diodes; Temperature; Temperature measurement; Voltage measurement; GaN; Schottky barrier diodes; thermionic-field emission;
Conference_Titel :
Future of Electron Devices, Kansai, (IMFEDK), 2011 International Meeting for
Conference_Location :
Osaka
Print_ISBN :
978-1-61284-145-8
Electronic_ISBN :
978-1-61284-147-2
DOI :
10.1109/IMFEDK.2011.5944854
