DocumentCode
2116765
Title
Low Frequency Noise Properties of Microwave Transistors and their Application to Circuit Design
Author
Graffeuil, J. ; Plana, R.
Author_Institution
LAAS-CNRS and Université P. Sabatier de Toulouse, 7 av. Colonel Roche, 31077 Toulouse Cedex FRANCE
Volume
1
fYear
1994
fDate
5-9 Sept. 1994
Firstpage
62
Lastpage
75
Abstract
A knowledge of low frequency (L.F) noise in FET´s, HBT´s and others related devices is essential in designing oscillators, multipliers, mixers and broadband amplifiers. Physical origins and assessment techniques ofthis noise are addressed A lot of L.F noise measurements on commercial and research devices either performed in our laboratory or picked up from literature are presented and are intended to give the state of the art of today available performance. Finally design rules for reducing the impact of L.F noise on microwave circuits are suggested.
Keywords
Broadband amplifiers; Circuit noise; Circuit synthesis; FETs; Frequency; Low-frequency noise; Microwave devices; Microwave oscillators; Microwave transistors; Noise measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 1994. 24th European
Conference_Location
Cannes, France
Type
conf
DOI
10.1109/EUMA.1994.337198
Filename
4138243
Link To Document