• DocumentCode
    2116765
  • Title

    Low Frequency Noise Properties of Microwave Transistors and their Application to Circuit Design

  • Author

    Graffeuil, J. ; Plana, R.

  • Author_Institution
    LAAS-CNRS and Université P. Sabatier de Toulouse, 7 av. Colonel Roche, 31077 Toulouse Cedex FRANCE
  • Volume
    1
  • fYear
    1994
  • fDate
    5-9 Sept. 1994
  • Firstpage
    62
  • Lastpage
    75
  • Abstract
    A knowledge of low frequency (L.F) noise in FET´s, HBT´s and others related devices is essential in designing oscillators, multipliers, mixers and broadband amplifiers. Physical origins and assessment techniques ofthis noise are addressed A lot of L.F noise measurements on commercial and research devices either performed in our laboratory or picked up from literature are presented and are intended to give the state of the art of today available performance. Finally design rules for reducing the impact of L.F noise on microwave circuits are suggested.
  • Keywords
    Broadband amplifiers; Circuit noise; Circuit synthesis; FETs; Frequency; Low-frequency noise; Microwave devices; Microwave oscillators; Microwave transistors; Noise measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference, 1994. 24th European
  • Conference_Location
    Cannes, France
  • Type

    conf

  • DOI
    10.1109/EUMA.1994.337198
  • Filename
    4138243