Title :
Tailoring the electronic properties of vertically stacked quantum-dots by local potential modulation
Author :
Takahashi, Hiroki ; Minari, Hideki ; Mori, Nobuya
Author_Institution :
Grad. Sch. of Eng., Osaka Univ., Suita, Japan
Abstract :
We have theoretically investigated electronic properties of InAs/GaAs quantum-dot superlattices in which a potential well is inserted in the center of each InAs quantum dot. We find that the potential well pulls down exclusively the energy of the lowest miniband and provides an additional design parameter for solar cell application.
Keywords :
arsenic compounds; gallium compounds; indium compounds; quantum dots; solar cells; GaAs; InAs; electronic properties; local potential modulation; quantum-dot superlattices; solar cell; vertically stacked quantum-dots; Electric potential; Energy states; Gallium arsenide; Photovoltaic cells; Potential well; Quantum dots; Superlattices; GaAs; InAs; Intermediate-band solar cell; Quantum dot; Solar cell; Superlattice;
Conference_Titel :
Future of Electron Devices, Kansai, (IMFEDK), 2011 International Meeting for
Conference_Location :
Osaka
Print_ISBN :
978-1-61284-145-8
Electronic_ISBN :
978-1-61284-147-2
DOI :
10.1109/IMFEDK.2011.5944862
