Title :
Fabrication and characterization of antimonide-based composite-channel InAs/AlGaSb HFETs using high-k gate insulators
Author :
Kiso, T. ; Yoshikawa, H. ; Ishibashi, Y. ; Nishisaka, K. ; Ogata, K. ; Maemoto, T. ; Sasa, S. ; Inoue, M.
Author_Institution :
Nanomater. Microdevices Res. Center, Osaka Inst. of Technol., Osaka, Japan
Abstract :
We report on the fabrication and characterization of antimonide-based composite-channel InAs/AlGaSb HFETs. Antimonide-based compound semiconductors such as those of InAs combined with AlxGa1-xSb are candidates for high-speed and low-power digital applications. InAs/AlGaSb HFETs utilizing high-k (HfO2) gate insulator were fabricated using a Pd/Au ohmic metallization. The HFETs exhibited transconductance, gm and maximum drain current density, Id of 270 mS/mm, and 360mA/mm. Furthermore, InAs HFETs using the Ga2O3/HfO2 stacks as a gate insulator and shows a gm of 318 mS/mm, that is, the transconductance was improved by using a Ga2O3 dielectric.
Keywords :
high electron mobility transistors; semiconductor device metallisation; InAs-AlGaSb; Pd/Au ohmic metallization; antimonide-based composite-channel InAs/AlGaSb HFET; antimonide-based compound semiconductors; high-k gate insulators; low-power digital applications; HEMTs; Insulators; Logic gates; MODFETs; Resistance; Transconductance; Transmission line measurements; Compound semiconductor; HFET; InAs; high-k gate insulator;
Conference_Titel :
Future of Electron Devices, Kansai, (IMFEDK), 2011 International Meeting for
Conference_Location :
Osaka
Print_ISBN :
978-1-61284-145-8
Electronic_ISBN :
978-1-61284-147-2
DOI :
10.1109/IMFEDK.2011.5944863
