• DocumentCode
    2117012
  • Title

    Resistance switching phenomenon in nano-conduction path formed by dielectric breakdown

  • Author

    Shimizu, T. ; Shiotani, Y. ; Shimomura, K. ; Shingubara, S. ; Otsuka, S. ; Takase, K.

  • Author_Institution
    Dept. of Mech. Eng., Kansai Univ., Suita, Japan
  • fYear
    2011
  • fDate
    19-20 May 2011
  • Firstpage
    100
  • Lastpage
    101
  • Abstract
    Huge magnetoresistance switching phenomenon, whose MR ratio exceeded 300%, was observed in a nano-conduction path (NCP). The ferromagnetic NCP was formed by the use of dielectric breakdown of insulator (SiO2) concomitant with an introduction of ferromagnetic atoms into NCP by electromigration.
  • Keywords
    electric breakdown; electromigration; ferromagnetic materials; magnetoresistance; nanowires; dielectric breakdown; electromigration; ferromagnetic atoms; magnetoresistance switching phenomenon; nano conduction path; Dielectric breakdown; Electromigration; Magnetic fields; Magnetoresistance; Resistance; Switches; Tunneling; dielectric breakdown; electromigration; magnetoresistance; nanowire;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Future of Electron Devices, Kansai, (IMFEDK), 2011 International Meeting for
  • Conference_Location
    Osaka
  • Print_ISBN
    978-1-61284-145-8
  • Electronic_ISBN
    978-1-61284-147-2
  • Type

    conf

  • DOI
    10.1109/IMFEDK.2011.5944864
  • Filename
    5944864
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2117012