Title :
AlGaAs/GaAs HeteroJunction Bipolar Transistor Technology for Multi-Glga-Samples per Second ADCs
Author :
Wang, K.C. ; Nary, K.R. ; Nubling, R.B. ; Beccue, S.M. ; Pierson, R.L. ; Chang, M.F. ; Asbeck, P.M. ; Huang, R.T.
Author_Institution :
Rockwell Science Center, Thousand Oaks, CA 91360 USA
Abstract :
This paper reports a manufacturable AlGaAs/GaAs heterojunction bipolar (HBT) technology, and development of HBT circuits for analog to digital conversion. HBT voltage comparators operated well above 10 GSps. Sample and hold circuits worked at 2 GSps with less than ¿40 dB distortion. Multi-GSps 4-bit quantizers and 6-bit ADCs were realized. Multi-GSps 8¿bit ADCs as well as high-high-resolution sigma-delta ADCs, based on this HBT technology, are being developed.
Keywords :
Analog-digital conversion; Gallium arsenide; Heterojunction bipolar transistors; Integrated circuit interconnections; Integrated circuit measurements; Integrated circuit technology; Microelectronics; Pulp manufacturing; Schottky diodes; Voltage;
Conference_Titel :
Microwave Conference, 1994. 24th European
Conference_Location :
Cannes, France
DOI :
10.1109/EUMA.1994.337207
