Characterization of transient drain current overshoot in poly-Si TFTs

Characteristics of transient drain current overshoot in poly-Si TFTs are measured, and the physical mechanisms behind the observed results are discussed. By changing the terminals on which the step voltage is applied, two main mechanisms causing the transient current, i.e., the electron trapping effect and the self-heating effect, can be separately evaluated. Using this technique, the bias and geometrical dependence of the transient characteristics can be clearly understood.