• DocumentCode
    2117259
  • Title

    Advantage of high-density plasma nitridation for improving thermal stability of ultrathin GeO2 on Ge(100)

  • Author

    Kasuya, A. ; Kutsuki, K. ; Hideshima, I. ; Hosoi, T. ; Shimura, T. ; Watanabe, H.

  • Author_Institution
    Dept. of Mater. & Life Sci., Osaka Univ., Suita, Japan
  • fYear
    2011
  • fDate
    19-20 May 2011
  • Firstpage
    122
  • Lastpage
    123
  • Abstract
    We have investigated the thermal stability of ultrathin germanium oxynitride (GeON) gate dielectrics fabricated by plasma nitridation of ultrathin thermal oxide (GeO2). Thermal treatment up to 520°C effectively improved the electrical properties of the ultrathin GeON dielectrics, such as reduced bulk and interface defects.
  • Keywords
    dielectric materials; dielectric thin films; germanium compounds; nitridation; plasma materials processing; thermal stability; GeO2-Ge; electrical property; gate dielectrics; high-density plasma nitridation; thermal stability; thermal treatment; ultrathin germanium oxynitride; ultrathin thermal oxide; Annealing; Capacitance-voltage characteristics; Dielectrics; Nitrogen; Plasma temperature; Temperature measurement; Thermal stability; MOS devices; Thermal stability; germanium; germanium oxynitride;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Future of Electron Devices, Kansai, (IMFEDK), 2011 International Meeting for
  • Conference_Location
    Osaka
  • Print_ISBN
    978-1-61284-145-8
  • Electronic_ISBN
    978-1-61284-147-2
  • Type

    conf

  • DOI
    10.1109/IMFEDK.2011.5944875
  • Filename
    5944875
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2117259