DocumentCode
2117315
Title
Effect of uniaxial strain on the electronic transport in single layer graphene
Author
Ohmi, Yusuke ; Ogawa, Matsuto ; Souma, Satofumi
Author_Institution
Dept. of Electr. & Electron. Eng., Kobe Univ., Kobe, Japan
fYear
2011
fDate
19-20 May 2011
Firstpage
126
Lastpage
127
Abstract
We study the effect of the various types of strain on the electronic band structure and the transport characteristics in graphene. It has been found that the combination of shear and armchair uniaxial deformation is an effective way to open the band gap, meaning the efficient controllability of the electronic current through graphene.
Keywords
energy gap; graphene; shear deformation; C; armchair uniaxial deformation; band gap; electronic band structure; electronic current; electronic transport; shear uniaxial deformation; single layer graphene; uniaxial strain; Controllability; Lattices; Materials; Photonic band gap; Tensile stress; Uniaxial strain; Graphene; band gap engineering; non-equilibrium Green´s function method; strain engineering; tight-binding method;
fLanguage
English
Publisher
ieee
Conference_Titel
Future of Electron Devices, Kansai, (IMFEDK), 2011 International Meeting for
Conference_Location
Osaka
Print_ISBN
978-1-61284-145-8
Electronic_ISBN
978-1-61284-147-2
Type
conf
DOI
10.1109/IMFEDK.2011.5944877
Filename
5944877
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