DocumentCode :
2117786
Title :
Three Dimensional Monte Carlo Simulation Of Ion Implantation With Octree Based Point Location
Author :
Stippel, H. ; Selberherr, S.
Author_Institution :
Technical University of Vienna
fYear :
1993
fDate :
14-15 May 1993
Firstpage :
122
Lastpage :
123
Keywords :
Computational geometry; Computational modeling; Implants; Ion implantation; Microelectronics; Semiconductor device modeling; Semiconductor devices; Solid modeling; Statistics; Trajectory;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Process and Device Modeling, 1993. (1993 VPAD) 1993 International Workshop on
Print_ISBN :
0-7803-1338-0
Type :
conf
DOI :
10.1109/VPAD.1993.724750
Filename :
724750
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2117786
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