DocumentCode :
2118144
Title :
Advances in high power semiconductor lasers
Author :
Knigge, S. ; Crump, P. ; Wenzel, Hans ; Erbert, Gotz ; Trankle, Gunther
Author_Institution :
Ferdinand-Braun-Inst., Leibniz-Inst. fur Hochstfrequenztechnik, Berlin, Germany
fYear :
2013
fDate :
8-12 Sept. 2013
Firstpage :
466
Lastpage :
467
Abstract :
We review high power semiconductor laser development at the Ferdinand-Braun-Institut, focusing on studies to improve material quality, design development for peak performance in standard structures and the development of novel device concepts for new applications.
Keywords :
optical materials; semiconductor lasers; design development; high power semiconductor laser; improve material quality; peak performance; Diode lasers; Laser applications; Laser modes; Materials; Performance evaluation; Power generation; Power lasers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photonics Conference (IPC), 2013 IEEE
Conference_Location :
Bellevue, WA
Print_ISBN :
978-1-4577-1506-8
Type :
conf
DOI :
10.1109/IPCon.2013.6656639
Filename :
6656639
Link To Document :
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