Implants of ClusterBoron® and ClusterCarbonTM materials for USJ applications - a study with various anneal techniques

We present results for B₁₈H₂₂ implants using ClusterBoron material for PMOS ultra-shallow junction (USJ) applications using solid phase epitaxial regrowth (SPER), high temperature spike anneal, impulse RTP (iRTP) and Flash Assisted RTP^TM anneals. The effect of co-implants on boron activation (Rs) and junction depth (Xj) are compared for both B₁₈SH₂₂ and BF₂ implants. We show that the Rs, Xj parameters obtained for carbon co-implant after spike anneal satisfy the requirements for the 45 nm node technology. With diffusion-less anneals using iRTP at 950°C, we show that B₁₈H₂₂ alone satisfies the 32nm node requirement of Xj at 15nm, but compromises Rs. With flash anneal, Rs and Xj show potential for producing Xj ˜ 15 nm and Rs ≪ 1000 ohms/sq that falls within the requirements for 32nm technology node devices. Additionally for B₁₈H₂₂ -only implants we show TEM images showing no end of range (EOR) damage even after diffusion-less anneals, including SPER anneals.