500 °C Bipolar SiC Linear Voltage Regulator

Author

Kargarrazi, Saleh ; Lanni, Luigia ; Saggini, Stefano ; Rusu, Ana ; Zetterling, Carl-Mikael

Author_Institution

Sch. of Inf. & Commun. Technol., KTH R. Inst. of Technol., Stockholm, Sweden

Volume

62

Issue

6

fYear

2015

fDate

Jun-15

Firstpage

1953

Lastpage

1957

Abstract

In this paper, we demonstrate a fully integrated linear voltage regulator in silicon carbide NPN bipolar transistor technology, operational from 25°C up to 500°C. For 15-mA load current, this regulator provides a stable output voltage with <;2% variation in the temperature range 25°C-500°C. For both line and load regulations, degradation of 50% from 25°C to 300°C and improvement of 50% from 300°C to 500°C are observed. The transient response measurements of the regulator show robust behavior in the temperature range 25°C-500°C.

Keywords

bipolar transistors; silicon compounds; voltage regulators; wide band gap semiconductors; SiC; bipolar linear voltage regulator; bipolar transistor technology; current 15 mA; temperature 25 degC to 500 degC; transient response measurements; Regulators; Resistors; Silicon carbide; Temperature distribution; Temperature measurement; Voltage control; Voltage measurement; Bipolar junction transistor (BJT); high-temperature IC; regulators; silicon carbide (SiC); silicon carbide (SiC).;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2015.2417097

Filename

7084110