Title :
Monolithic integration of lasers, photodiodes, waveguides and spot size converters on GaInAsP/InP for photonic IC applications
Author :
Hamacher, M. ; Kaiser, R. ; Heidrich, H. ; Albrecht, P. ; Borchert, B. ; Janiak, K. ; Löffler, R. ; Malchow, S. ; Rehbein, W. ; Schroeter-Janßen, H.
Author_Institution :
Heinrich-Hertz-Inst. fur Nachrichtentech. Berlin GmbH, Germany
Abstract :
This paper reports on 1.3 μm complex coupled DFB lasers, 1.55 μm (wavelength selective) photodiodes and passive spot size converters integrated with Y-shaped waveguide structures on InP, developed for further monolithic integration purposes. The characteristics of such IC subintegrations are similar to those of comparable, separately fabricated devices. Results on first somewhat more complex monolithic Y-junction 1.3 μm/1.5 μm transmitter/receiver ICs are presented
Keywords :
III-V semiconductors; distributed feedback lasers; gallium arsenide; indium compounds; integrated optics; optical waveguides; photodiodes; transceivers; 1.3 micron; 1.55 micron; GaInAsP-InP; GaInAsP/InP photonic IC; complex coupled DFB laser; monolithic integration; optical transceiver; spot size converter; waveguide Y-junction; wavelength selective photodiode; Indium phosphide; Monolithic integrated circuits; Optical crosstalk; Optical device fabrication; Optical receivers; Optical transmitters; Optical waveguides; Photodiodes; Waveguide lasers; Wavelength converters;
Conference_Titel :
Indium Phosphide and Related Materials, 2000. Conference Proceedings. 2000 International Conference on
Conference_Location :
Williamsburg, VA
Print_ISBN :
0-7803-6320-5
DOI :
10.1109/ICIPRM.2000.850220
