Title :
Chemical etching of InGaAsP/InP using HBr-H3PO4 -K2Cr2O7 and its application to microlens array
Author :
Park, Eun-Hyun ; Kwon, Young-Se
Author_Institution :
Dept. of Electr. Eng., Korea Adv. Inst. of Sci. & Technol., Seoul, South Korea
Abstract :
InP/InGaAsP etching properties of HBr-H3PO4-(0.5M)K2Cr2O7 etchant such as masking material, etching rate, etching profile, etched side wall shape and etc are studied. Using these characteristics, we made InP microlens array. SEM pictures and AFM measurement confirm that formed microlens array has high uniformity and good surface quality. The height of microlens can be controlled by changing of the radius of photoresist mask pattern
Keywords :
III-V semiconductors; atomic force microscopy; etching; gallium arsenide; gallium compounds; indium compounds; microlenses; scanning electron microscopy; AFM measurement; HBr-H3PO4-K2Cr2O 7; InGaAsP-InP; InGaAsP/InP; SEM pictures; chemical etching; etched side wall shape; etching profile; etching rate; good surface quality; high uniformity; masking material; microlens array; photoresist mask pattern; Chemicals; Chromium; Etching; Indium phosphide; Lenses; Microoptics; Optical device fabrication; Optical surface waves; Resists; Shape;
Conference_Titel :
Indium Phosphide and Related Materials, 2000. Conference Proceedings. 2000 International Conference on
Conference_Location :
Williamsburg, VA
Print_ISBN :
0-7803-6320-5
DOI :
10.1109/ICIPRM.2000.850264
