DocumentCode
2123832
Title
DC and microwave characteristics of metamorphic InP/In0.53 Ga0.47As heterojunction bipolar transistors grown on GaAs substrates
Author
Wang, Hong ; Ng, Geok Ing ; Zheng, Haiqun ; Chua, Lye Heng ; Xiong, Yong Zhong
Author_Institution
Sch. of Electr. & Electron. Eng., Nanyang Technol. Inst., Singapore
fYear
2000
fDate
2000
Firstpage
235
Lastpage
238
Abstract
We report, for the first time, a metamorphic InP/In0.53Ga0.47As/InP double heterojunction bipolar transistors (DHBTs) on GaAs substrates grown by Solid-Source molecular beam epitaxy (SSMBE). Detailed dc and microwave characterization were done on the fabricated self-aligned metamorphic DHBTs. Devices with 5×5 μm2 emitter area showed a typical peak current gain of 40, a common-emitter breakdown voltage (BV CEO) higher than 9 V, a current gain cut-off frequency (fT) of 46 GHz and a maximum oscillation frequency (fMAX ) of 40 GHz. Detailed analysis suggests that the degradation of the base-emitter heterojunction interface and the increase of bulk recombination are the most probable causes for the poorer device performance of the current metamorphic HBTs compared to the lattice-matched HBTs
Keywords
III-V semiconductors; electron-hole recombination; gallium arsenide; heterojunction bipolar transistors; indium compounds; interface structure; microwave bipolar transistors; molecular beam epitaxial growth; semiconductor device breakdown; semiconductor device measurement; semiconductor growth; 40 GHz; 46 GHz; 5 mum; 9 V; DC characteristics; DHBT; GaAs substrates; InP-In0.53Ga0.47As; base-emitter heterojunction interface; bulk recombination; common-emitter breakdown voltage; current gain cut-off frequency; emitter area; maximum oscillation frequency; metamorphic InP/In0.53Ga0.47As heterojunction bipolar transistors; metamorphic InP/In0.53Ga0.47As/InP double heterojunction bipolar transistor; microwave characteristics; peak current gain; self-aligned metamorphic DHBTs; solid-source molecular beam epitaxy; Cutoff frequency; Double heterojunction bipolar transistors; Fabrication; Gallium arsenide; HEMTs; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; MODFETs; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials, 2000. Conference Proceedings. 2000 International Conference on
Conference_Location
Williamsburg, VA
ISSN
1092-8669
Print_ISBN
0-7803-6320-5
Type
conf
DOI
10.1109/ICIPRM.2000.850275
Filename
850275
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